2003
Conductive Bridging Random Access Memory Cell Fabricated With Top Ag Electrode, Polyethylene Oxide Layer, and Bottom Pt Electrode

Wednesday, October 30, 2013: 17:30
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Hyun-Min Seung, M.S. , Hanyang University, Seoul, South Korea
Dong-Hyun Park, B.S. , Hanyang University
Myung-JIn Song, B.S. , Hanyang University, Seoul, South Korea
Ki-Hyun Kwon, B.S. , Hanyang University
Han-Vit Jeoung, B.S. , Hanyang University
Jea-Gun Park, PhD , Hanyang University, Seoul, South Korea

Abstract:

  • E5-2003 (807.5KB) - Abstract Text
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