Compound Semiconductor Devices

Tuesday, October 29, 2013: 10:00-12:20
Golden Gate 7, Tower 3, Lobby Level (Hilton San Francisco Union Square)
10:00
2206
Improved Passivation Techniques for AlGaN/GaN Hemts
Travis J Anderson, Naval Research Laboratory; Andrew D Koehler, Naval Research Laboratory; Marko J Tadjer, Naval Research Laboratory; Karl D Hobart, Naval Research Laboratory; Neeraj Nepal, Naval Research Laboratory; Tatyana I Feygelson, Naval Research Laboratory; Bradford B Pate, Naval Research Laboratory; Charles R. Eddy Jr., Naval Research Laboratory; Fritz J Kub, Naval Research Laboratory
10:40
2207
Novel Functional Transistors of Transition Metal Dichalcogenide Monolayers
Taishi Takenobu, Waseda University
11:20
2208
Electrically Controllable Complex Oxide Interfaces
Ying-Hao Chu, PhD, National Chiao Tung University
12:00
2209
Synthesis of MoS2 Atomic Layer using PECVD
HyeongU Kim, Master&ph.d combined course, Sungkyunkwan University(SKKU) Advanced Institute of Nanotechnology (SAINT); Chisung Ahn, Master&ph.d combined course, Sungkyunkwan University(SKKU) Advanced Institute of Nanotechnology (SAINT); Girish Arabale, Doctor, School of Mechanical Engineering Sungkyunkwan uni.; Changgu Lee, Doctor, School of Mechanical Engineering Sungkyunkwan uni.; Taesung Kim, Doctor, Sungkyunkwan University
See more of: E11: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) 55
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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