Epitaxial Processing

Tuesday, October 29, 2013: 10:00-12:10
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Seiichi Miyazaki and Hiroshi Iwai
10:00
2226
(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing
Masao Sakuraba, Ph.D, Tohoku University; Junichi Murota, Tohoku University
10:30
2227
Atomically Flat Germanium (111) Surface by Hydrogen Annealing
Tomonori Nishimura, Department of Materials Engineering, School of Engineering, The University of Tokyo; Shoichi Kabuyanagi, Department of Materials Engineering, School of Engineering, The University of Tokyo; Choonghyun Lee, Department of Materials Engineering, School of Engineering, The University of Tokyo; Takeaki Yajima, Department of Materials Engineering, School of Engineering, The University of Tokyo; Kosuke Nagashio, Department of Materials Engineering, School of Engineering, The University of Tokyo; Akira Toriumi, Department of Materials Engineering, School of Engineering, The University of Tokyo
10:50
2228
Formation and Characterization of Strained Si1-XGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating
Naofumi Ueno, Bachelor of Engineering, Tohoku University; Masao Sakuraba, Ph.D, Tohoku University; Junichi Murota, Tohoku University; Shigeo Sato, Ph.D, Tohoku University
11:10
2229
(Invited) Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics
Taizoh Sadoh, Associate Professor, Kyushu University; Jong-Hyeok Park, Kyushu University; Masashi Kurosawa, PhD, Kyushu University; Masanobu Miyao, Professor, Kyushu University
11:40
2230
Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating
Yusuke Abe, Master of Engineering, Tohoku University; Shuji Kubota, Bachelor of Engineering, Tohoku University; Masao Sakuraba, Ph.D, Tohoku University; Junichi Murota, Tohoku University; Shigeo Sato, Ph.D, Tohoku University
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
<< Previous Session | Next Session >>