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Formation and Characterization of Strained Si1-XGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating
Formation and Characterization of Strained Si1-XGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating
Tuesday, October 29, 2013: 10:50
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E12-2228 (207.0KB) - Abstract Text