2230
Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating

Tuesday, October 29, 2013: 11:40
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Yusuke Abe, Master of Engineering , Tohoku University, Sendai, Japan
Shuji Kubota, Bachelor of Engineering , Tohoku University
Masao Sakuraba, Ph.D , Tohoku University, Sendai, Japan
Junichi Murota , Tohoku University
Shigeo Sato, Ph.D , Tohoku University

Abstract:

See more of: Epitaxial Processing
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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