Tunneling and Quantum Devices

Wednesday, October 30, 2013: 10:00-11:30
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chair:
Marc Sanquer
10:00
2242
(Invited) Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor Deposition
Paul Berger, The Ohio State University; Anisha Ramesh, The Ohio State University; Roger Loo, imec
10:30
2243
(Invited) Dopant-Atom-Based Tunnel SOI-MOSFETs
Michiharu Tabe, Shizuoka University; Daniel Moraru, Shizuoka University; Earfan Hamid, Shizuoka University; Arup Samanta, Shizuoka University; Le The Anh, Japan Advanced Institute of Science and Technology; Takeshi Mizuno, Shizuoka University; Hiroshi Mizuta, University of Southampton
11:00
2244
(Invited) Wide Bandgap Heterojunctions on Crystalline Silicon
James Sturm, Princeton University; Sushobhan Avasthi, Princeton University; Ken Nagamatsu, Princeton University; Janam Jhaveri, Princeton University; William E. McClain, Princeton University; Gabriel Man, Princeton University; Antoine Kahn, Princeton University; Jeffrey Schwartz, Princeton University; Sigurd Wagner, Princeton University
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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