(Invited) Simulation of GaN Device Reliability

Monday, May 12, 2014: 09:10
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
M. E. Law, E. Patrick, and D. Horton (University of Florida)
Device simulation is a well established tool, and is used to predict performance of devices.  It can include both carrier and lattice temperature simulations to enhance the simulation accuracy.  Process simulation accounts for materials property and structural change, and includes point defects, extended defects, mechanical strain, and reaction kinetics.  When the two are fused, you can begin to simulate the structural changes over operation time to a device.  This talk will present a simulation platform to address this and share results on both off- and on- state degradation of AlGaN / GaN HEMT transistors.  In the off-state, the gate contact degrades due to induced mechanical stress from high electric fields.  In the on-state, degradation is driven by hot-carrier injection and accumulation of charge at the AlGaN surface.