(Invited) Crystal Defects in Wide Bandgap Semiconductors

Wednesday, May 14, 2014: 13:45
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
K. Shenai (Argonne National Laboratory), A. Christou (University of Maryland), M. Dudley, B. Ragothamachar (Stony Brook University), and R. Singh (Clemson University)
The state-of-the-art power switching devices made from SiC and GaN semiconductors contain a high density of crystal defects [1]. Most of these defects are present in starting wafers and some are generated during device processing. There is little conclusive evidence so far on the exact role crystal defects paly on device performance, manufacturing yield, and more importantly, long-term field-reliability especially when devices are operating under extreme environments. This paper will review the current state-of-the-art of material defects in SIC and GaN power semiconductors, and the potential role these defects may have on high-density power switching electronics. A review of silicon technology development and manufacturing evolution will be made to draw a parallel between the state of silicon and wide bandgap power electronics.

[1] K. Shenai et al, “Current status and emerging trends in wide bandgap (WBG) semiconductor power devices,” ECS J. Solid State Sci. and Tech. 2(8), N3055-N3063, Jul 2013