Novel Wide Energy Bandgap Electronic and Optical Devices II

Wednesday, May 14, 2014: 13:45-17:20
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Soohwan Jang and Brent P Gila
13:45
1541
(Invited) Crystal Defects in Wide Bandgap Semiconductors
K. Shenai (Argonne National Laboratory), A. Christou (University of Maryland), M. Dudley, B. Ragothamachar (Stony Brook University), and R. Singh (Clemson University)
14:15
1542
(Invited) Study of Carrier Localization, Carrier Transportation and Carrier Recombination Processes in Blue-Emitting InGaN/GaN MQWs
C. Li, E. B. Stokes (University of North Carolina at Charlotte), and E. A. Armour (Veeco Instruments Inc.)
14:35
1543
(Invited) Structural and Optical Properties of InN Quantum Dots Grown by an Alternating Supply of Source Precursors
W. C. Ke, W. C. Houng, and H. P. Huang (Yuan Ze University)
 
1544
Analysis of V-Shaped Pits Originated from Threading Dislocation in III-Nitrides Compound for Light Emitting Diodes (Cancelled)
15:15
Break
15:30
1545
Photo-Electroless-Etching of Wide Band Gap Material for Flexible Solid-State Devices
A. B. Slimane, T. K. Ng, and B. S. Ooi (King Abdullah University of Science & Technology)
 
1546
Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN/GaN Heterostructures (Cancelled)
16:10
1547
Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT
Y. Y. Wong, E. Y. Chang, Y. K. Chen, S. C. Liu, Y. C. Lin, and J. S. Maa (National Chiao Tung University)
16:30
1548
Beyond Electron Based Metamaterials: Low-Loss Surface Phonon Polariton-Based Nano-Antenna Arrays Using Silicon Carbide
O. J. Glembocki (U.S. Naval Research Laboratory), J. D. Caldwell (U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C., USA), Y. Francescato (The Blackett Laboratory, Imperial College, London, U.K.), N. Sharac (University of California, Irvine), F. J. Bezares (ASEE/NRC Postdoctoral Fellow (residing at Naval Research Laboratory, Washington, D.C.)), V. Giannini (The Blackett Laboratory, Imperial College, London, U.K.), J. P. Long, J. C. Owrutsky (U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C., USA), C. Ellis (ASEE/NRC Postdoctoral Fellow (residing at Naval Research Laboratory, Washington, D.C.)), J. Tischler, I. Vurgaftman (U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C., USA), S. A. Maier (The Blackett Laboratory, Imperial College, London, U.K.), T. Reinecke (U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C., USA), L. Lindsay (ASEE/NRC Postdoctoral Fellow (residing at Naval Research Laboratory, Washington, D.C.)), V. D. Wheeler (U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C., USA), A. Giles (ASEE/NRC Postdoctoral Fellow (residing at Naval Research Laboratory, Washington, D.C.)), E. A. Imhoff (U.S. Naval Research Laboratory), L. Shirey, N. Bassim (U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C., USA), and R. Kasica (Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD)
17:00
1549
Effect of O Impurity on the Properties of InGaN/GaN Multiple Quantum Well and Light Emitting Diode Structures
Y. Li, E. A. Berkman (Veeco Instrument Inc.), and E. B. Stokes (University of North Carolina at Charlotte)
See more of: Q2: Wide Bandgap Semiconductor Materials and Devices 15
See more of: Electronic and Photonic Devices and Systems
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