3C-SiC on Si: A Biocompatible Material for Advanced Bioelectronic Devices

Wednesday, May 14, 2014: 08:10
Bonnet Creek Ballroom VIII, Lobby Level (Hilton Orlando Bonnet Creek)
S. E. Saddow, C. Frewin, M. Reyes, J. Register, M. Nezafati, and S. Thomas (University of South Florida)
Silicon carbide (SiC) has long been known as a robust semiconductor with superior properties to silicon for electronic applications. Consequently a tremendous amount of international activity has been on-going for over four decades to develop high-power solid state SiC electronics. While this activity has focused on the hexagonal polytypes of SiC, the only form that can be grown directly on Si substrates, 3C-SiC (or cubic SiC) has been researched for non-electronic applications such as MEMS and biosensors. In particular in our group we have pioneered several biomedical devices using 3C-SiC grown on Si substrates, and recently has been investigating the use of this novel material for clean energy applications. This invited paper will review nearly a decade of activity in this regard, with particular emphasis on the most promising applications: in-vivo glucose monitoring, biomedical implants for connecting the human nervous system to advanced prosthetics, and MEMS/NEMS research aimed at allowing for in-vivo diagnostic and therapeutic systems for advanced biomedical applications.