GaN-based Optical Devices

Monday, May 12, 2014: 13:30-16:40
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
Gary W. Hunter and Yu-Lin Wang
(Invited) Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications
M. Shur (Rensselaer Polytechnic Institute), R. Gaska, A. Dobrinsky, and M. Shatalov (Sensor Electronic Technology, Inc.)
(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate
S. J. Lee (Korea Photonics Technology Institute, Veeco Instruments Inc.), H. J. Park, J. B. Park (Korea Photonics Technology Institute, Chonnam National University), D. W. Jeon, J. H. Baek (Korea Photonics Technology Institute), H. Li, B. Krishnan, J. Su, A. Paranjpe, and D. S. Lee (Veeco Instruments Inc.)
(Invited) Flexible 3-Dimensional Graphene Foam-Based NO2 Gas Sensors
C. Lee, B. J. Kim, and J. Kim (Korea University)
Sapphire Substrate Geometrical Effects on III-N Blue LED Material Properties
E. A. Armour (Veeco Instruments Inc.), M. Hu (Veeco Instruments Taiwan Techology Center), D. P. Byrnes (Veeco Instruments, Inc.), K. Sun (Veeco Instruments Taiwan Technology Center), G. D. Papasouliotis (Veeco Instruments), L. B. Maiocco (Saint Gobain Ceramics & Plastics, Inc.), M. A. Brosnan, and C. J. Gasdaska (Saint-Gobain Ceramics & Plastics, Inc.)
(Invited) Vertical-Geometry GaN-Based Light-Emitting Diodes: Improving Current Injection and Light Extraction Efficiencies
Y. W. Choi (Korea University), W. S. Yum (LG Innotek), and T. Y. Seong (Korea University)