Compound Semiconductor Systems

Monday, May 12, 2014: 10:00-12:00
Lake, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Artur Podhorodecki and Fabrice Gourbilleau
10:00
1566
GaAs-Based Nanostructured Emitters for Monitoring Surface Immobilized Molecules
J. J. Dubowski (Université de Sherbrooke)
10:40
1567
(Invited) Point Defect Characterization of Group-III Nitrides by Using Monoenergetic Positron Beams
A. Uedono (University of Tsukuba), S. Ishibashi, N. Oshima, R. Suzuki (National Institute of Advanced Industrial Science and Technology), and M. Sumiya (National Institute for Materials Science)
11:20
1568
Optically Allowed Photoluminescence from a Direct-Gap Si-Ge Superstructure on Si0.4Ge0.6
D. J. Lockwood, N. L. Rowell (National Research Council Canada), A. Gouyé, L. Favre, A. Ronda, and I. Berbezier (Institut Matériaux Microélectronique Nanosciences de Provence)
11:40
1569
Zinc Oxide/Samaria Nanowires with Intense Photoluminescence
I. Enculescu, E. Matei, C. Florica, M. Enculescu, A. Costas, and A. Evanghelidis (National Institute of Materials Physics)
See more of: R1: Nanoscale Luminescent Materials 3
See more of: Luminescence and Display Materials, Devices, and Processing
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