Compound Semiconductor Systems

Monday, May 12, 2014: 10:00-12:00
Lake, Ground Level (Hilton Orlando Bonnet Creek)
Artur Podhorodecki and Fabrice Gourbilleau
(Invited) Point Defect Characterization of Group-III Nitrides by Using Monoenergetic Positron Beams
A. Uedono (University of Tsukuba), S. Ishibashi, N. Oshima, R. Suzuki (National Institute of Advanced Industrial Science and Technology), and M. Sumiya (National Institute for Materials Science)
Optically Allowed Photoluminescence from a Direct-Gap Si-Ge Superstructure on Si0.4Ge0.6
D. J. Lockwood, N. L. Rowell (National Research Council Canada), A. Gouyé, L. Favre, A. Ronda, and I. Berbezier (Institut Matériaux Microélectronique Nanosciences de Provence)
Zinc Oxide/Samaria Nanowires with Intense Photoluminescence
I. Enculescu, E. Matei, C. Florica, M. Enculescu, A. Costas, and A. Evanghelidis (National Institute of Materials Physics)