2043
Non-Melting Phase Change Memory – Topological-Switching RAM (TRAM)

Wednesday, 8 October 2014: 16:40
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, T. Morikawa, K. Akita, and N. Takaura (Low-power Electronics Association & Project)
Superlattice phase change memory (PRAM) of the repeated films of [Sb2Te3/GeTe], we call this memory "TRAM", Topological-switching RAM, was studied to show some evidences of non-melting features compared to that of the conventional alloy PRAM, e.g. Ge2Sb2Te5. One evidence was very fast switching with the shorter and the rectangular pulses in both SET and RESET. Other evidence was direct observation of the TRAM using TEM after 10 million switching cycles.