Emerging Nonvolatile Memories

Wednesday, 8 October 2014: 15:40-17:20
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
Chairs:
Takasumi Ohyanagi and Hisashi Shima
15:40
2041
(Invited) Non-Equilibrium Transport Theory Applied to Nano Electronics Problems
Y. Asai and H. Nakamura (Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST))
16:10
2042
(Invited) Electric-Field-Induced Ultralow Power Switching in Superlattice Phase Change Materials
T. Shintani, S. Soeya (Institute of Advanced Industrial Science and Technology, Central Research Laboratory, Hitachi, Ltd.), and T. Saiki (Keio University)
16:40
2043
Non-Melting Phase Change Memory – Topological-Switching RAM (TRAM)
T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, T. Morikawa, K. Akita, and N. Takaura (Low-power Electronics Association & Project)
17:00
2044
Semiconductor-Based Magnetic Switching Device
S. Joo (KRISS), B. Lee (Inha University), and K. Rhie (Korea University)
See more of: Q5: Nonvolatile Memories
See more of: Electronic and Photonic Devices and Systems
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