Emerging Nonvolatile Memories

Wednesday, 8 October 2014: 15:40-17:20
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
Takasumi Ohyanagi and Hisashi Shima
(Invited) Non-Equilibrium Transport Theory Applied to Nano Electronics Problems
Y. Asai and H. Nakamura (Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST))
(Invited) Electric-Field-Induced Ultralow Power Switching in Superlattice Phase Change Materials
T. Shintani, S. Soeya (Institute of Advanced Industrial Science and Technology, Central Research Laboratory, Hitachi, Ltd.), and T. Saiki (Keio University)
Non-Melting Phase Change Memory – Topological-Switching RAM (TRAM)
T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, T. Morikawa, K. Akita, and N. Takaura (Low-power Electronics Association & Project)
Semiconductor-Based Magnetic Switching Device
S. Joo (KRISS), B. Lee (Inha University), and K. Rhie (Korea University)