Flash Lamp Annealing Effect on Stability of Oxide TFT

Tuesday, 7 October 2014: 14:20
Expo Center, 1st Floor, Universal 4 (Moon Palace Resort)
S. J. Moon (Department of Display Engineering, Hoseo University), K. M. Yu, S. H. Jeong, J. Y. Kim (Hoseo University), B. K. Kim, H. J. Kim (ViatronTechnologies), E. J. Yun, and B. S. Bae (Hoseo University)
Flash-lamp annealing (FLA) of a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The flash lamp anneal pulse width is so small that thermal stresses becomes small. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model is related to a structural model to compute stresses and deflections. We used flash-lamp annealing to improve the quality of oxide material for the TFT application.  We investigated the flash lamp annealing to improve the stability of Oxide TFT. The IGZO (Indium Gallium Zinc Oxide) was deposited on a glass for the characterization of a single layer. And next, The Oxide TFT was fabricated on the P-type wafer with thermal SiO2 of 3000 Ǻ. The IGZO was deposited on the substrate by the RF Sputter. And then, the sample was annealed at 430 ℃ in a furnace. We have investigated Xenon (Xe) FLA effect on the stability of each IGZO single layer and Oxide TFT. We investigated the effect of the FLA as varying the power of the lamp. And also, we investigated the effect of the substrate temperature and shot numbers of the flash lamp. A metal layer for source and drain electrode was deposited after FLA by the thermal evaporation. We measured the bias stress and light illumination effect on the transfer curves. For the structural analysis, we used the Raman spectroscopy, X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS).