(Invited) Spin Transport in Germanium

Spin transport in semiconductors forms the basis of potential new technologies in information processing and storage. I will highlight the work leading to the first demonstration of spin transport and precession in germanium.  This includes the development of single-crystalline MgO tunnel barriers and ferromagnetic Fe electrodes and their incorporation into lateral spin valves. Measurements in the non local spin transport geometry including Hanle spin precession provides the unambiguous proof for spin injection and transport in germanium.  In addition, I will discuss our development of a two-dimensional form of germanium, known as germanane, consisting of hydrogen-terminated honeycomb sheets, similar to graphene. This new 2D material is a direct gap semiconductor with band gap of ~1.5 eV and has favorable properties for spintronic devices.