Q7 Poster Session: Semiconductors, Dielectrics, and Metals for Nanoelectronics 12

Wednesday, 8 October 2014: 18:00-20:00
Expo Center, 1st Floor, Center and Right Foyers (Moon Palace Resort)
2117
The Study of Charge Trapping in Mahas Memory Structure with Various HfO2 Trap Layer Thicknesses
H. Na (Department of Materials Science and Engineering, Yonsei University), J. Oh, K. Lee, and H. Sohn (Department of Materials Science and engineering, Yonsei University)
2118
Fabrication and Physical Properties of Thin Films TiNx for Infrared Absorption
B. Jiang (Nanjing University of Science and Technology), T. Dong (Buskerud-Vestfold University College-HBV), Y. He (Nanjing University of Science and Technology), Z. Yang (Buskerud-Vestfold University College-HBV), Y. Su (Nanjing University of Science and Technology), and K. Wang (Buskerud and Vestfold University College)
2119
Comparison of O2 Plasma Treatment on Porous Low Dielectric Constant Material in Sidewall and Bottom of Trench Structure
Y. L. Cheng, B. H. Lin, and W. S. Haung (National Chi-Nan University)
2120
Fabrication and Characteristic of Wrinkled Stiff Thin Films on Elastomeric Substrates by Surface Treatments
S. C. Lim, J. B. Koo, C. W. Park, J. Y. Oh, S. W. Jung, B. S. Na, S. S. Lee, and H. Y. Chu (Electronics and Telecommunications Research Institute (ETRI))
2121
Characteristics of Inkjet-Printed Separators in Graphene-Based Supercapacitors
Y. S. Yang, I. K. You, S. H. Hong, and H. G. Yun (Electronics and Telecommunications Research Institute)
 
2122
SURMOFs as Ultra-low k Dielectric Thin Films (Cancelled)
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