Nonvolatile Memories Poster Session

Wednesday, 8 October 2014: 18:00-20:00
Expo Center, 1st Floor, Center and Right Foyers (Moon Palace Resort)
Chair:
Shoso Shingubara
2045
Effect of Selenium Doping on GeSb for Phase Change Memory Applications
D. H. Ko, J. H. Kim, D. S. Byeon (Department of Materials Science and Engineering, Yonsei University), and J. H. Park (Process Development team, semiconductor R&D Division, Samsung Electronics Co., Ltd)
2046
Charge Trapping Properties of Silicon Carbonitride Storage Layers for Nonvolatile Memories
K. Kobayashi, S. Naito, S. Tanaka, and Y. Ito (Tokai University)
2047
Study on Oxide Thickness Dependence of Current-Voltage Characteristics for HfOx Based ReRAM Device
Y. Hamada, S. Otsuka, T. Shimizu, and S. Shingubara (Kansai University)
2048
Ovonic Threshold Switching Selection Device Based on Chalcogenide ZnTe for Cross-Point ReRAM Device
Y. Kim, Y. Min, J. Lee (Department of Materials Science and Engineering, Yonsei University), and H. Sohn (Department of Materials Science and engineering, Yonsei University)
2049
Effect of Valence State of Doping Materials on Resistance Switching Characteristics of Doped HfO2 Films
K. Lee (Department of Materials Science and engineering, Yonsei University), Y. J. Kim (Department of Materials Science and Engineering, Yonsei University), J. I. Kim, T. H. Kim (Department of Materials Science & Engineering, Yonsei University.), and H. Sohn (Department of Materials Science and engineering, Yonsei University)
See more of: Q5: Nonvolatile Memories
See more of: Electronic and Photonic Devices and Systems
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