Session II

Monday, 6 October 2014: 14:00-17:00
Expo Center, 1st Floor, Universal 6 (Moon Palace Resort)
Chairs:
Taishi Takenobu and Howard E Jackson
14:00
2141
New Approaches to Realizing High Power Nitride Based Field Effect Transistors
M. Shur (Rensselaer Polytechnic Institute), G. Simin (University of South Carolina), and R. Gaska (Sensor Electronic Technology, Inc.)
14:30
2142
Simulation of Radiation Damage in GaN HEMT Structures
E. Patrick, M. Choudhury, and M. E. Law (University of Florida)
15:00
2143
Low Power Zinc-Oxide Based Charge Trapping Memory with Embedded Silicon Nanoparticles
A. Nayfeh (Masdar Institue of Science and Technology), A. Okyay (Bilkent University, UNAM), N. El-Atab (Masdar Institute of Science and Technology), A. Ozcan, and S. Alkis (Bilkent University, UNAM)
15:30
2144
InAs/InP Quantum Dash Nanostructure Based Broadband Emitters: A Step Towards Energy Efficient Optical Communication
M. Z. M. Khan, T. K. Ng, and B. S. Ooi (King Abdullah University of Science & Technology)
16:00
2145
Topological Insulator Bi2Se3 Nanowire Field Effect Transistors
H. Zhu (Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology), E. Zhao (George Mason University), C. A. Richter (Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology), and Q. Li (George Mason University)
16:30
2146
Optical Properties and Defect Formation in Gallium Phosphide/Gallium Nitrogen Phosphide Core/Shell Nanowires
A. Dobrovolsky, J. E. Stehr (Linkoping University), Y. J. Kuang, S. Sukrittanon, C. W. Tu (University of California, La Jolla), W. M. Chen, and I. A. Buyanova (Linkoping University)
See more of: Q9: State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS 56)
See more of: Electronic and Photonic Devices and Systems
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