Effects of Chemical Doping and Defect Density on Electrical and Optical Properties of Graphene As a Transparent and Conductive Electrode

Wednesday, 27 May 2015: 11:30
Conference Room 4C (Hilton Chicago)
S. Oh, G. Yang, Y. Jung, and J. Kim (Korea University)
Indium tin oxide (ITO) has been commonly used as a transparent and conductive electrode in many applications owing to its outstanding electrical conductivity and transparency. However, ITO still suffers from limited resource, low transmittance at UV and IR region, chemical instability, poor flexibility and complex fabrication process. Recently, graphene is considered as one of the ideal materials for transparent and conductive electrodes because it has intriguing properties such as high conductivity, transmittance at wide wavelength ranges, flexibility and so on. But its high sheet resistance compared to that of ITO needs to be improved. Chemical doping of graphene can be used to reduce its sheet resistance. Similarly, defects in graphene can affect its electrical, optical properties and chemical sensitivity. Therefore, we investigated the effects of chemical doping and defects on graphene.

In our experiments, single layered graphenes grown by chemical vapor deposition method on Cu-foil were used. The details of the results will be presented at the meeting.