Novel Wide Bandgap Materials and Devices

Wednesday, 27 May 2015: 08:30-12:30
Conference Room 4C (Hilton Chicago)
Chairs:
C.-F. Lo and Colm O'Dwyer
08:30
1462
Optically Transparent Flexible IGZO TFTs Fabricated with a Selective Wet-Etch Process
A. Tari, C. H. Lee, and W. S. Wong (University of Waterloo)
08:50
1463
Impact of Carbon-Doped Ｉn-Si-O Channel for Future TFT
K. Kurishima (National Institute for Materials Science, Meiji University), T. Nabatame, N. Mitoma, T. Kizu, K. Tsukagoshi, T. Sawada, A. Ohi (National Institute for Materials Science), I. Yamamoto, T. Ohishi (Shibaura Institute of Technology), T. Chikyow (National Institute for Materials Science), and A. Ogura (Meiji University)
09:10
1464
Effect of Island Configuration and Neutral Axis Location for Mechanical Bending Strain on a-IGZO Thin Film Transistors
C. B. Park, J. J. Kim, H. Na, T. H. Moon, S. S. Yoo, and M. S. Yang (R&D Center, LG Display)
09:30
1465
Effect of Rising Edge in Dynamic Stress with Various Duty Ratio in Amorphous Ingazno Thin Film Transistor
Y. H. Lee, S. J. Seok (POSTECH), B. K. Kim, S. H. Kim, T. K. Lee (LG Display), and O. Kim (POSTECH)
09:50
Break
10:10
1466
Effects of Annealing Pressure and Ambient on Thermally Robust RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure
L. M. Kyaw, Y. Liu (National University of Singapore), M. Y. Lai, T. N. Bhat, H. R. Tan, P. C. Lim, S. Tripathy (Institute of Materials Research and Engineering, A*STAR), and E. F. Chor (National University of Singapore)
10:30
1467
Simulation Comparison of Self-Heating Effects in Junctionless Nanowire Transistors and FinFET Devices
G. Mariniello and M. Pavanello (Centro Universitario da FEI)
10:50
1468
Weak Quantum Confinement and Polaritons in ZnO and ZnO Cu Nanocrystals Prepared by Electrochemical Method
T. V. Torchynska (Instituto Politécnico Nacional, México), B. El Filali, A. I. Díaz Cano (Instituto Politécnico Nacional, Mexico), and L. V. Shcherbyna (V.Lashkaryov Institute Semiconductor Physics, Ukraine)
11:10
1469
ALD NiO Thin Films As a Hole Transport-Electron Blocking Layer Material for Photo-Detector and Solar Cell Devices
W. J. Nam, Z. Gray (The Pennsylvania State University), J. Stayancho, V. Plotnikov, D. Kwon (Lucintech Inc), S. Waggoner (The Pennsylvania State University), D. V. Shenai-Khatkhate, M. Pickering, T. Okano (The Dow Chemical Company), A. Compaan (Lucintech Inc), and S. J. Fonash (The Pennsylvania State University, Solarity LLC)
11:30
1470
Effects of Chemical Doping and Defect Density on Electrical and Optical Properties of Graphene As a Transparent and Conductive Electrode
S. Oh, G. Yang, Y. Jung, and J. Kim (Korea University)
 
1471
Development of Wide Bandgap Multifunctional NiO Nanostructures and Thin Films for Sensing Applications (Cancelled)
12:10
1472
Analysis of Patterned Defects on Graphene Using Micro-Raman Spectroscopy and Liquid Crystals
G. Yang, S. Oh, and J. Kim (Korea University)
See more of: H05: Wide Bandgap Semiconductor Materials and Devices 16
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>