Optically Transparent Flexible IGZO TFTs Fabricated with a Selective Wet-Etch Process
Flexible IGZO TFTs having 85% optical transparency in the visible regime were fabricated on polyethylene napthalate substrates using a selective wet etching process to eliminate the need for lift-off processing. The devices were processed directly onto the plastic platform at a maximum temperature of 150°C. The TFT structure consisted of a sputtered 100 nm aluminum doped zinc oxide (AZO) gate electrode, a 300nm SiNx gate dielectric deposited using plasma enhanced chemical vapor deposition (PECVD) method at 150ºC, and a 50nm IGZO layer deposited using RF sputtering at room temperature. A 150 nm AZO source/drain (S/D) electrodes were deposited by using RF sputtering at 150ºC and patterned wet etching process in diluted HCl solution having a selectivity of 11 between AZO and IGZO. The channel width and length of the studied TFTs were 200 and 100 µm, respectively.
The fabricated TFTs exhibited a field-effect mobility of ~10 cm2/V.sec, threshold voltage of ~5.0 V, a sub-threshold swing of 0.8 V/decade, and an Ion/Ioff ratio of 107. No current crowding behavior was observed for the TFTs at the low drain-source voltage (VD) regime. The I-V characteristics showed excellent ohmic contacts can be fabricated using AZO S/D electrodes through a wet etching process and promises a more conventional approach to large-area flexible electronics fabrication. The highly selective etching process provides a means to fabricate IGZO based circuits with low processing complexity that will enable system-on-“plastic” integration of flexible transparent flexible displays. In addition, the effect of long-term electrical bias on the electrical stability of the devices will also be presented.