Materials and Process Technology

Thursday, 28 May 2015: 09:00-10:20
Williford Room B (Hilton Chicago)
Chairs:
Bich-Yen Nguyen and Joao Antonio Martino
09:00
Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen Radical Treatment
F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
09:20
Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
B. J. Hutchinson (Tyndall National Institute - UCC), V. S. Teodorescu (National Institute of Material Physics, Bucharest), R. Negrea (National Institute of Materials Physics), B. Sheehan (Tyndall National Institute - UCC), P. Carolan (Tyndall National Institute -UCC), S. O'Brien (Tyndall National Institute - UCC), M. Modreanu (Tyndall National Institute -UCC), M. E. Pemble, and I. M. Povey (Tyndall National Institute - UCC)
09:40
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, T. Goto, M. Hirayama, S. Sugawa, and T. Ohmi (Tohoku University)
10:00
Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern
T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi (Tohoku University), Y. Kamata, Y. Kumagai, and K. Shibusawa (LAPIS Semiconductor Miyagi Co., Ltd.)