Materials and Process Technology

Thursday, 28 May 2015: 09:00-10:20
Williford Room B (Hilton Chicago)
Chairs:
Bich-Yen Nguyen and Joao Antonio Martino
09:00
1351
Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen Radical Treatment
F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
09:20
1352
Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
B. J. Hutchinson (Tyndall National Institute - UCC), V. S. Teodorescu (National Institute of Material Physics, Bucharest), R. Negrea (National Institute of Materials Physics), B. Sheehan (Tyndall National Institute - UCC), P. Carolan (Tyndall National Institute -UCC), S. O'Brien (Tyndall National Institute - UCC), M. Modreanu (Tyndall National Institute -UCC), M. E. Pemble, and I. M. Povey (Tyndall National Institute - UCC)
09:40
1353
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, T. Goto, M. Hirayama, S. Sugawa, and T. Ohmi (Tohoku University)
10:00
1354
Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern
T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi (Tohoku University), Y. Kamata, Y. Kumagai, and K. Shibusawa (LAPIS Semiconductor Miyagi Co., Ltd.)
See more of: H01: Advanced CMOS-Compatible Semiconductor Devices 17
See more of: Electronic and Photonic Devices and Systems
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