H03 Poster Session

Wednesday, 27 May 2015: 18:00-20:00
Salon C (Hilton Chicago)
1393
Light Emitting Properties of Si-Rich-Si3N4 Films Grown By PECVD Method
T. V. Torchynska (Instituto Politécnico Nacional, México), J. L. Casas Espinola, G. Polupan, E. Vergara Hernandez (Instituto Politécnico Nacional, Mexico), L. Khomenkova (Institute of Semiconductor Physics, NAS of Ukraine), and A. Slaoui (ICube, France)
1394
Process Optimization of CoSi2 Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing
J. Y. Lee, H. J. Kim, E. J. Kim, H. S. Song, S. J. Yeom (SK hynix, Inc.), T. Ishigaki, K. Kang, and W. S. Yoo (WaferMasters, Inc.)
 
1395
Pulse Width Modulation for Reducing Pulsed MOS Capacitor Measurement Time (Cancelled)
1396
Non-Volatile Resistive Memory Switching in Pulsed Laser Deposited Rare-Earth Gallate-GdGaO3 Thin Films
Y. Sharma (Dept. of Physics, University of Puerto Rico), S. P. Pavunny (University of Puerto Rico), J. F. Scott (university of cambridge), and R. S. Katiyar (University of Puerto Rico)
1397
Novel Buffered Magnetic Logic Gate Grid
T. Windbacher, A. Makarov, V. Sverdlov, and S. Selberherr (Institute for Microelectronics, TU Wien)
1398
Characterization of Ge Epitaxial Growth on Si1-XGeX Buffer Layer
H. Jang, B. Kim, S. Koo, and D. H. Ko (Yonsei University)
1399
Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System
H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii (Tohoku University), S. Yamashita (Fujikin Incorporated), A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
1400
Improved Structural and Electric Characterstics of Al/ALD-HfO2/Ge MOS Capacitor by Germanium Dioxide and Germanium Oxynitride as Interfacial Layer
R. Prasher, D. Dass, and R. Vaid (University of Jammu)
See more of: H03: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>