H03 Poster Session

Wednesday, 27 May 2015: 18:00-20:00
Salon C (Hilton Chicago)
Light Emitting Properties of Si-Rich-Si3N4 Films Grown By PECVD Method
T. V. Torchynska (Instituto Politécnico Nacional, México), J. L. Casas Espinola, G. Polupan, E. Vergara Hernandez (Instituto Politécnico Nacional, Mexico), L. Khomenkova (Institute of Semiconductor Physics, NAS of Ukraine), and A. Slaoui (ICube, France)
Process Optimization of CoSi2 Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing
J. Y. Lee, H. J. Kim, E. J. Kim, H. S. Song, S. J. Yeom (SK hynix, Inc.), T. Ishigaki, K. Kang, and W. S. Yoo (WaferMasters, Inc.)
Pulse Width Modulation for Reducing Pulsed MOS Capacitor Measurement Time (Cancelled)
Non-Volatile Resistive Memory Switching in Pulsed Laser Deposited Rare-Earth Gallate-GdGaO3 Thin Films
Y. Sharma (Dept. of Physics, University of Puerto Rico), S. P. Pavunny (University of Puerto Rico), J. F. Scott (university of cambridge), and R. S. Katiyar (University of Puerto Rico)
Novel Buffered Magnetic Logic Gate Grid
T. Windbacher, A. Makarov, V. Sverdlov, and S. Selberherr (Institute for Microelectronics, TU Wien)
Characterization of Ge Epitaxial Growth on Si1-XGeX Buffer Layer
H. Jang, B. Kim, S. Koo, and D. H. Ko (Yonsei University)
Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System
H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii (Tohoku University), S. Yamashita (Fujikin Incorporated), A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)