Semiconductor Electrochemistry - Electrodeposition and Growth

Wednesday, 27 May 2015: 15:20-17:40
Conference Room 4F (Hilton Chicago)
Chair:
Andrew Campion Hillier
15:20
1313
(Invited) Investigations into the Formation of Germanene Using Electrochemical Atomic Layer Deposition (E-ALD)
M. Ledina, X. Liang (The University of Georgia), Y. G. Kim (California Institute of Technology, JCAP), J. Jung, B. Perdue, C. Tsang (The University of Georgia), M. Soriaga (California Institute of Technology, JCAP), and J. L. Stickney (The University of Georgia)
16:00
1314
(Invited) Direct Electrodeposition of Crystalline III-V Semiconductor Films
S. Maldonado (University of Michigan)
16:40
1315
ZnO Electrodeposition on Boron-Doped Diamond: Effects of Zinc Precursor Concentration
P. Gautier, A. Vallée (ILV- CNRS - UVSQ), A. Etcheberry (Institut Lavoisier de Versailles, UVSQ), and N. Simon (ILV- CNRS - UVSQ)
17:00
1316
Investigation of Photoelectrochemical Deposition of Zn(S,O) Via Nitrate Ions Reduction in the Presence of Thiourea
S. Gallanti, E. Chassaing (IRDEP), M. Bouttemy (Institut Lavoisier de Versailles), A. Etcheberry (CNRS-UVSQ), D. Lincot, and N. Naghavi (IRDEP)
See more of: G02: Processes at the Semiconductor Solution Interface 6
See more of: Electronic Materials and Processing
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