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(Invited) Band Gap Tunable Monolayer WSe2(1-x)S2x Synthesis, Characterization and Device Applications
(Invited) Band Gap Tunable Monolayer WSe2(1-x)S2x Synthesis, Characterization and Device Applications
Monday, October 12, 2015: 15:00
105-C (Phoenix Convention Center)
“Band gap engineering” in two-dimensional (2D) materials plays an important role in tailoring their physical and chemical properties. The tuning of the band gap is typically achieved by controlling the composition of the semiconductor alloys.1-4 Here, we report the synthesis and electrical properties of monolayer WSe2(1-x)S2x. The photoluminescence (PL) spectroscopy results confirm the tunable band gap in WSe2(1-x)S2x, which is modulated by varying the S content. Atomic-scale analysis was performed and the chemical composition was characterized using high-resolution scanning transmission electron microscopy and X-ray photoemission spectroscopy. The mobility and carrier concentrations were measured in as-grown monolayer-based transistor devices. The emergency of these 2D materials provides grand possibilities for future semiconductor device applications.
References:
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2. Y. Gong, Z. Liu, A. R. Lupini, G. Shi, J. Lin, S. Najmaei, Z. Lin, A. L. Elías, A. Berkdemir, G. You, H. Terrones, M. Terrones, R. Vajtai, S. T. Pantelides, S. J. Pennycook, J. Lou, W. Zhou and P. M. Ajayan, Nano Lett., 2014, 14, 442–449.
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