(Invited) Integration of 2-D Materials for Electronic Device Application

Monday, October 12, 2015: 14:30
105-C (Phoenix Convention Center)
J. Jia, J. Jeon, J. H. Park (Sungkyunkwan University), and S. Lee (Sungkyunkwan University)
In this work, we present our recent progresses on the integration of 2-d materials (TMD, BP, TMC) for the electronic device application.

In spite of the recent heightened interest in molybdenum disulfide (MoS2) as a two-dimensional material with substantial bandgaps and reasonably high carrier mobility, a method for the layer-controlled and large-scale synthesis of high quality MoS2 films has not previously been established. Here, we demonstrate that layer-controlled and large-area CVD MoS2 films can be achieved by treating the surfaces of their bottom SiO2 substrates with oxygen plasma process. In addition, by using various polymers, we present that the doping level of MoS2 layers can be controlled for realization of electronic devices.

Black phosphorous (BP) is known as a most stable allotrope of phosphorous. Recent studies have shown that BP is an elemental layered material, making it possible to obtain layered structures through mechanical cleavage. In this study, we report the preparation of thickness-controlled few-layer black phosphorus (BP) films through the modulated plasma treatment of BP flakes. Not only does the plasma treatment control the thickness of the BP film, it also removes the chemical degradation of the exposed oxidized BP surface, which results in enhanced field-effect transistor (FET) performance.