(Solid State Science and Technology Student Poster Winner) Evaluation of Dynamic Hydrophobicity of Nanoporous Silicon Surfaces Prepared By Metal-Assisted Chemical Etching
p-type silicon (100) substrates were immersed in a mixed solution of 2×10-2 mol dm-3 AgNO3 and 5 mol dm-3 HF to deposit Ag particles on the entire surface of silicon substrates. After deposition of Ag particles, silicon substrates were immersed in a mixed solution of 10 mol dm-3 HF and 1 mol dm-3 H2O2at room temperature at different time. SEM images of obtained porous silicon after etching with different surface roughness are shown in Fig. 1. WCAs (approximately 135°) of etched silicon were higher than that of flat silicon (75°), presumably due to decrease of contact area between porous structure and droplet based on Cassie’s model. Although surface roughness increased with increasing etching time, however, WCAs of etched silicon were about the same (135°) despite the difference in surface morphologies (Fig. 1a-c). On the other hand, WSAs increased with increasing surface roughness. The changes in WSAs were thought to be caused by the pinning effect generated by increase of pore diameter and surface roughness during chemical etching. These results indicate that WSA is affected more significantly by physical inhomogeneity such as surface roughness of the etched surface than WCA.
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