ReRAM-2

Wednesday, October 14, 2015: 10:00-12:00
Curtis B (Hyatt Regency)
Chairs:
Blanka Magyari-Kope and Gennadi Bersuker
10:00
764
(Invited) Simulation and Modeling of the Switching Dynamics in Resistive Switching Devices
S. Menzel (Forschungszentrum Jülich)
10:30
765
(Invited) Simulating the Behavior of a Bipolar Filamentary ReRAM Cell for Upcoming Memory Devices
S. Wicklein (SanDisk), C. Petti, T. Minville, A. Bandyopadhyay (SanDisk Inc), and A. Ilkbahar (SanDisk Inc)
 
766
Modulating the Anionic-Electronic Transport Kinetics to Trigger Memristance for Resistive Switching Non-Volatile Memories: New Materials, Structering and Methods (Cancelled)
11:20
767
Multilevel Resistive Switching with Oxygen Vacancy Filaments in  Pt/TaOx/Cu and Pt/TaOx/Pt Devices
Y. Kang, G. Ghosh (ECE Department Virginia Tech), and M. K. Orlowski (ECE Department Virginia Tech)
11:40
768
Multi Level Operation of CuO Based Cbram with Cute Electrode
D. W. Kim, K. C. Kwon, M. J. Song, K. H. Kwon, H. J. KiM, S. M. Jin, Y. J. Son (Hanyang University), and J. G. Park (Hanyang University)
See more of: D02: Nonvolatile Memories
See more of: Dielectric Science and Materials
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