Ge and III-V Technologies 1

Tuesday, October 13, 2015: 08:00-10:00
103-B (Phoenix Convention Center)
Chairs:
Hiroshi Iwai and Osamu Nakatsuka
08:00
1080
Self-Assemble Formation of Ge Dots on Si(100) via C/Ge/C/Si Structure
Y. Itoh, T. Kawashima (Graduate School of Engineering, Tohoku University), and K. Washio (Graduate School of Engineering, Tohoku University)
08:20
1081
Gate-Bias Dependent Phonon Softening Observed in Ge MOSFETs
S. Kabuyanagi, T. Nishimura, T. Yajima (The University of Tokyo), and A. Toriumi (The University of Tokyo)
08:40
1082
Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by Oil-Immersion Raman Spectroscopy
K. Takeuchi, D. Kosemura (Renewable Energy Res. Labs., Meiji University), S. Yamamoto (School of Science and Technology, Meiji University), M. Tomita (School of Science and Technology, Meiji University), K. Usuda (AIST-GNC), N. Sawamoto (Meiji University), and A. Ogura (Meiji University)
09:00
1083
(Invited) Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits
S. Zaima (Nagoya University), O. Nakatsuka (Nagoya University), T. Yamaha, T. Asano (Nagoya University, Japan Society for the Promotion of Science Research Fellow), S. Ike (Nagoya University, Japan Society for the Promotion of Science Research Fellow), A. Suzuki, M. Kurosawa, W. Takeuchi (Nagoya University), and M. Sakashita (Nagoya University)
09:30
Break
See more of: G04: ULSI Process Integration 9
See more of: Electronic Materials and Processing
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