Gate Stack and Characterization

Tuesday, October 13, 2015: 13:30-16:00
103-B (Phoenix Convention Center)
Chairs:
Eddy Simoen and Meng Tao
13:30
1088
(Invited) Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory
T. Tsuchiya (Shimane University)
14:00
1089
(Invited) Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks
A. Toriumi (The University of Tokyo) and X. Li (The University of Tokyo)
14:30
1090
(Invited) High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100)
S. Miyazaki (Graduate School of Engineering, Nagoya University) and A. Ohta (Graduate School of Engineering, Nagoya University)
15:00
1091
(Invited) Negative Capacitance Using Ferroelectrics for Future Steep-Slope MOSFETS
A. O'Neill (Newcastle University)
15:30
1092
Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure
H. Watanabe, A. Ohta, K. Makihara (Nagoya University), and S. Miyazaki (Nagoya University)
15:50
Intermission
See more of: G04: ULSI Process Integration 9
See more of: Electronic Materials and Processing
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