Materials Synthesis

Tuesday, October 13, 2015: 13:30-14:30
Ellis East (Hyatt Regency)
Chair:
Balaji Raghothamachar
13:30
(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor
G. D. Papasouliotis (Veeco Instruments, Inc.), J. Su (Veeco Instruments Inc.), B. Krishnan (Veeco Instruments Inc.), and R. Arif (Veeco Instruments, Inc.)
14:00
(Invited) Quality Improvement and Mapping Analysis of Single Crystal 4H SiC Grown with Purified Beta-SiC Powder Source
Y. Kim, E. Jung, M. Lee (Korea Institute of Ceramic Engineering and Technology), J. Kim (Korea Institute of Ceramic Engineering and Technology), and D. Choi (Yonsei University)