Materials Synthesis

Tuesday, October 13, 2015: 13:30-14:30
Ellis East (Hyatt Regency)
Chair:
Balaji Raghothamachar
13:30
1123
(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor
G. D. Papasouliotis (Veeco Instruments, Inc.), J. Su (Veeco Instruments Inc.), B. Krishnan (Veeco Instruments Inc.), and R. Arif (Veeco Instruments, Inc.)
14:00
1124
(Invited) Quality Improvement and Mapping Analysis of Single Crystal 4H SiC Grown with Purified Beta-SiC Powder Source
Y. Kim, E. Jung, M. Lee (Korea Institute of Ceramic Engineering and Technology), J. Kim (Korea Institute of Ceramic Engineering and Technology), and D. Choi (Yonsei University)
See more of: G05: GaN & SiC Power Technologies 5
See more of: Electronic Materials and Processing
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