Semiconductor Growth & Processing

Monday, October 12, 2015: 09:00-12:40
Curtis A (Hyatt Regency)
Chair:
Fan Ren
09:00
Si Dopant Behavior in InGaAs
K. S. Jones, A. Lind (University of Florida), H. Aldridge Jr. (University of Florida), and C. Hatem (Applied Materials)
09:40
CMOS Compatible in-Situ N-Type Doping of Ge Using New Generation Doping Agents P(MH3)3 and As(MH3)3 (M=Si, Ge)
C. Xu (Department of Physics, Arizona State Univ.), J. D. Gallagher (Department of Physics, Arizona State Univ.), C. Senaratne, P. Sims (Dept. of Chemistry and Biochemistry, Arizona State Univ.), J. Kouvetakis (Dept. of Chemistry and Biochemistry, Arizona State Univ.), and J. Menendez (Department of Physics, Arizona State Univ.)
10:40
Break
11:00
Propagation of Nanopores and Formation of Nanoporous Domains during Anodization of n-InP in KOH
D. N. Buckley, R. P. Lynch (University of Limerick, Ireland), N. Quill (University of Limerick, Ireland), and C. O'Dwyer (University College Cork)
11:40
Towards Electrochemical Fabrication of Free-Standing Indium Phosphide Nanofilms
N. Quill (Department of Physics & Energy, University of Limerick), C. O'Dwyer (University College Cork and Tyndall National Institute), D. N. Buckley (University of Limerick, Ireland), and R. P. Lynch (University of Limerick, Ireland)
12:00
Plasma Assisted Low Temperature Synthesis of WSe2
H. Medina, Y. Z. Chen, T. Y. Su, J. K. Li (Dept. of Mater. Sci. and Eng., NTHU), and Y. L. Chueh (Dept. of Mater. Sci. and Eng., NTHU)