Semiconductor Growth & Processing
Monday, October 12, 2015: 09:00-12:40
Curtis A (Hyatt Regency)
09:00
Si Dopant Behavior in InGaAs
K. S. Jones, A. Lind (University of Florida), H. Aldridge Jr. (University of Florida), and C. Hatem (Applied Materials)
09:40
CMOS Compatible in-Situ N-Type Doping of Ge Using New Generation Doping Agents P(MH3)3 and As(MH3)3 (M=Si, Ge)
C. Xu (Department of Physics, Arizona State Univ.), J. D. Gallagher (Department of Physics, Arizona State Univ.), C. Senaratne, P. Sims (Dept. of Chemistry and Biochemistry, Arizona State Univ.), J. Kouvetakis (Dept. of Chemistry and Biochemistry, Arizona State Univ.), and J. Menendez (Department of Physics, Arizona State Univ.)