Nitride Materials & Devices

Tuesday, October 13, 2015: 14:00-17:40
Curtis A (Hyatt Regency)
Jennifer K Hite
Future Power Electronics with GaN and Diamond
S. Chowdhury (Arizona State University)
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
J. D. Greenlee (NRC Postdoctoral Fellow Residing at NRL), B. Feigelson (Naval Research Laboratory), T. J. Anderson, J. K. Hite (U.S. Naval Research Laboratory), K. D. Hobart (Naval Research Laboratory), and F. J. Kub (Naval Research Laboratory)
Study of the Effects of GaN Buffer Layer Quality on the dc Characteristics of AlGaN/GaN High Electron Mobility Transistors
S. Ahn, W. Zhu, C. Dong, Y. H. Hwang, B. J. Kim, F. Ren, S. J. Pearton, A. G. Lind (University of Florida), K. S. Jones (University of Florida), and I. Kravchenko (Oak Ridge National Laboratory)
Thermal Engineering of GaN Semiconductor Devices
S. Graham (Georgia Institute of Technology)
Low Dislocation Density AlGaN Epilayers for UV Laser Diodes and Devices for Power Electronics
A. A. Allerman, M. W. Moseley, M. H. Crawford, J. J. Wierer, A. M. Armstrong, A. G. Baca, R. J. Kaplar (Sandia National Laboratories), and B. G. Clark (Sandia National Laboratories)
Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN
E. Douglas, C. Sanchez, A. G. Baca, A. Allerman (Sandia National Laboratories), and R. J. Kaplar (Sandia National Laboratories)