Graphene, a novel material, has attracted significant attention due to its distinctive band structure and fascinating physical properties. These unusual properties have caused the emergence of tantalizing potential applications, ranging from field effect transistors to chemical and biochemical sensors. Due to their low mass, high quality factor, and good optical properties, silicon nitride micromembrane resonators are widely used in force and mass sensing applications. However, for practical graphene devices, many problems need to be solved, such as morphology control, interfacial engineering between graphene and silicon nitride substrate.

       Here, we transfer graphene to the silicon nitride substrates with two different morphologies (holes and grooves). Monolayer graphene film can be prepared on the copper via chemical vapor deposition (CVD) process as previous reported method. Next step is transfering graphene to the substrate. The morphologies of graphene on the substrate were obtained by SEM (Fig. 1a,b). As shown , the graphene in the hole and groove is not suspended, but directly exposed to the substrate. The graphene’s Raman information in hole is achieved by the micro-Raman spectrometer (Fig. 1c), which shows good quality . Such hybrid Graphene/Porous Silicon Nitride structures can be used to fabricate field-effect transistors.