G02 Poster Session

Tuesday, 31 May 2016: 18:00-20:00
Exhibit Hall H (San Diego Convention Center)
Chair:
Kuniyuki Kakushima
1185
Development of Characterization Platform Dedicated to Bio-Inspired Objects at the Nanoscale
C. Carmignani, A. Thuaire (Univ. Grenoble Alpes,CEA-LETI), A. Rongier, L. Altamura (Univ. Grenoble Alpes,CEA-IRTSV), C. Brun, P. Reynaud, E. Rolland, N. David (Univ. Grenoble Alpes,CEA-LETI), P. Rannou (CEA-Grenoble, INAC/SPrAM, UMR 5819, France), V. Forge (Univ. Grenoble Alpes,CEA-IRTSV), T. Ernst (Univ. Grenoble Alpes,CEA-LETI), and S. Cheramy (CEA, LETI, University Grenoble Alpes)
 
1186
A Thermal Method to Reduce the Polysilicon Resistance for Deep Submicron Integration Process (Cancelled)
1187
Simulation of the Germanium-Tin Tunneling Field-Effect Transistors with a Ge Cap Layer: Improved Subthreshold Swing and Ion/Ioff Ratio
L. Liu, R. Liang, J. Wang, and J. Xu (Tsinghua University)
1188
Comprehensive Characterization of Dual Implanted Silicon after Electrical Activation Annealing
W. S. Yoo (WaferMasters, Inc.), B. S. Jeon, S. D. Kim (SK hynix, Inc.), T. Ishigaki, and K. Kang (WaferMasters, Inc.)
1189
Effect of Substrate Type on CoSi2 Formation in Rapid Thermal Annealing
E. J. Kim, J. Y. Lee, S. D. Kim, H. S. Song, S. J. Yeom (SK hynix, Inc.), T. Ishigaki, K. Kang, and W. S. Yoo (WaferMasters, Inc.)
1190
High Dopant Activation and Diffusion Suppression of Phosphorus in Ge Crystal with High-Temperature Implantation By Two-Step Microwave Annealing
T. L. Shih and W. H. Lee (Department of Electrical Engineering, National Cheng Kung University)
1191
Wet Chemical Etching Behavior Investigation for CMOS Shallow Trench Isolation (STI) Shape Control
H. Tai, P. C. Chang, H. W. Ho, H. Y. Liao, M. C. Lu, and T. H. Ying (Powerchip Technology Corporation)
 
1192
Analysis of the Retention Characteristic in Three dimensional Junction-less Charge Trapping Memory (Cancelled)
1193
High-K Metal-Gate Nanowire Junctionless FinFET with Nickel Silicide by Microwave Annealing
W. T. Tsai and Y. H. Lin (National United University)
1194
Improvement of Germanium Channel Nmosfet By Using Fluorine Co-Implant Methods
T. H. Chi, Y. H. Lin, W. T. Tsai, and H. H. Li (National United University)
1195
Novel Oxidants and Sources of Nitrogen for Atomic Layer Deposition
D. Alvarez Jr., J. Spiegelman, E. Heinlein, R. Holmes, C. Ramos, M. Leo, and S. Webb (RASIRC)
1196
Study on the Gallium Antimonide (GaSb) Semiconductor Surface in Wet Chemical Solutions
D. Seo, J. Lee, J. Na, and S. Lim (Dept. Chemical and Biomolecular Eng. Yonsei University)
1197
Crystallinity Evaluation of Low Temperature Polycrystalline Silicon Thin Film Using UV/Visible Raman Spectroscopy
R. Yokogawa (Meiji University), K. Takahashi, K. Komori (Development Dept., Tokyo Electron Tohoku Ltd.), Y. Hirota (Tokyo Electron Ltd.), N. Sawamoto, and A. Ogura (Meiji University)
 
1198
Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors (Cancelled)
1199
High Performance Tri-Gate Germanium-on-insulator Based Junctionless Nanowire Transistors
C. Sun, R. R. Liang, J. Wang, and J. Xu (Institude of Microelectronics)
1200
Removal of Ion-Implanted Photoresist on GaAs Surface Using Organic Solvents
E. Oh, J. Na, S. Lee, and S. Lim (Dept. Chemical and Biomolecular Eng. Yonsei University)
1201
Hot-Wire Chemical Vapour Deposition for Silicon Nitride Waveguides
T. Domínguez Bucio, A. Tarazona, A. Z. Khokhar, G. Z. Mashanovich, and F. Y. Gardes (University of Southampton)
See more of: G02: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
See more of: Electronic Materials and Processing
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