Characterization and Analysis

Tuesday, 31 May 2016: 08:30-12:30
Sapphire 410 A (Hilton San Diego Bayfront)
Chairs:
Anabela Veloso , K. Kita and Yaw S. Obeng
08:30
996
(Invited) Broadband Spectroscopic Characterization of Electrically Active Defects in Dielectrics: Monitoring the in-Service Evolution of Dialectics in Integrated System
Y. S. Obeng, C. A. Okoro, P. K. Amoah, and L. You (NIST)
09:00
997
(Invited) Characterization of Buried Interfaces with Scanning Probe Microscopes
J. J. Kopanski (National Institute of Standards and Technology), L. You (NIST), J. Li (SUNY Binghamton), J. J. Ahn (George Washington University), and Y. S. Obeng (NIST)
09:30
Intermission
09:50
998
(Invited) Non-Destructive Characterization of Dielectric - Semiconductor Interfaces by Second Harmonic Generation
I. Ionica, D. Damianos, A. Kaminski (IMEP-LAHC, Minatec, Grenoble INP, Univ. Grenoble-Alpes), G. Vitrant (IMEP-LAHC, Minatec, Univ. Grenoble-Alpes, CNRS), D. Blanc-Pélissier (INL, INSA de Lyon), J. Changala, M. Kryger (FemtoMetrix), C. Barbos (INL, INSA de Lyon), and S. Cristoloveanu (IMEP-LAHC, INP Minatec)
10:20
999
(Invited) A Complete Suite of Experimental Techniques for Electrical Characterization of Conventional and Incoming High-k Dielectric-Based Devices
S. Dueñas, H. Castán, H. García (UNIVERSIDAD DE VALLADOLID), T. Arroval, A. Tamm (University of Tartu), K. Kukli (University of Tartu, University of Helsinki), and J. Aarik (University of Tartu)
 
1000
(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology (Cancelled)
11:20
1001
(Invited) Development of in situ Electrochemical Small-Angle Neutron Scattering (eSANS) for Simultaneous Structure and Redox Characterization of Nanoparticles
V. M. Prabhu, V. Reipa (National Institute of Standards and Technology), A. J. Rondinone, E. Formo, and P. V. Bonnesen (Oak Ridge National Laboratory)
11:50
1002
Scanning Probe-Based in-Situ High Temperature Electrical and Electrochemical Studies
C. S. Ng (Nanyang Technological University, Singapore, Energy Research Institute @ NTU), J. D. Baek (Nanyang Technological University, Singapore), V. Zade, A. Villegas (University of California, Merced), P. C. Su (Nanyang Technological University, Singapore), A. Martini, and M. H. Lee (University of California, Merced)
12:10
1003
Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current
I. Ahmed, S. Chowdhury (Bangladesh University of Engineering and Technology), M. H. Alam (University of Texas, Austin), I. A. Niaz (University of California, San Diego), and Q. D. M. Khosru (Bangladesh University of Engineering and Technology)
See more of: D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing -and- Solid State Topics General Session
See more of: Dielectric Science and Materials
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