Alternate Channel Materials and Devices

Wednesday, 1 June 2016: 08:40-12:00
Indigo 206 (Hilton San Diego Bayfront)
Chairs:
P. J. Timans and Kuniyuki Kakushima
08:40
1203
(Invited)  Rapid In-Situ Carbon and Oxygen Cleaning of In0.53Ga0.47As(001) and Si0.5Ge0.5(110) Surfaces via a H2 RF Downstream Plasma
S. Wolf, M. Edmonds (University of California, San Diego), X. Jiang (PIE Scientific LLC), R. Droopad (Texas State University), N. Yoshida, L. Dong (Applied Materials), R. Galatage, S. Siddiqui, B. Sahu (Global Foundries), and A. Kummel (University of California, San Diego)
09:20
1204
Effect of Post Plasma Oxidation on Ge Gate Stacks Interface Formation
S. Mukhopadhyay, S. Mitra, Y. M. Ding (New Jersey Institute of Technology), K. L. Ganapathi (CeNSE,Indian Institute of Science, Bangalore, India), D. Misra (New Jersey Institute of Technology), N. Bhat (CeNSE,Indian Institute of Science, Bangalore, India), K. Tapily (TEL Technology Centre, America, LLC), R. D. Clark, S. Consiglio, C. S. Wajda, and G. J. Leusink (TEL Technology Center, America, LLC)
09:40
Break
10:00
1205
(Invited) CMOS Compatible High Performance IIIV Devices: Opportunities and Challenges
Y. Sun, K. T. Shiu, C. W. Cheng, A. Majumdar, R. Bruce, J. B. Yau (IBM T.J. Watson Research Center), D. Farmer, Y. Zhu (IBM T. J. Watson Research Center), M. Hopstaken (IBM T.J. Watson Research Center), M. M. Frank, T. Ando (IBM T. J. Watson Research Center), K. T. Lee, J. Rozen, D. K. Sadana (IBM T.J. Watson Research Center), V. Narayanan, R. T. Mo, and E. Leobandung (IBM T. J. Watson Research Center)
10:40
1206
Source/Drain Contact Resistance Reduction through Al-Doped ZnO Interlayer to Metal-Interlayer-GaAs Contact Structure
S. H. Kim, G. S. Kim, S. W. Kim, and H. Y. Yu (Korea University)
11:00
1207
Oxidation Characteristics of InAs Surface in Wet Chemical Treatment
J. Na, D. Seo, J. Lee, and S. Lim (Dept. Chemical and Biomolecular Eng. Yonsei University)
11:20
1208
Study of Electrostatics and Transport Properties of Multigate Graded Nanowire Channel MOSFETs
Q. D. M. Khosru, S. U. Z. Khan, and K. Datta (Bangladesh University of Engineering and Technology)
11:40
1209
Determination of Antiphase Domain Boundary Annihilation Rate in GaAs on Si(001) and the Influence of MOCVD Growth Temperature
C. S. C. Barrett, T. P. Martin (University of Florida), X. Y. Bao, P. Martin, E. Sanchez (Applied Materials), and K. S. Jones (University of Florida)
See more of: G02: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
See more of: Electronic Materials and Processing
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