Nitride Devices I

Monday, 30 May 2016: 13:40-16:00
Aqua 310 B (Hilton San Diego Bayfront)
Chair:
Marko J. Tadjer
14:30
GaN MIS-HEMT with Low Dynamic ON-Resistance Using SiON Passivation
S. C. Liu, C. K. Huang, and E. Y. Chang (National Chiao Tung University)
 
1220
Comparison of SiNx and AlN Passivations for AlGaN/GaN Hemts (Cancelled)
15:20
Characterization of GaN Device Interconnect Metallization Reliability
S. Kilgore, D. Hill, and B. Green (NXP Semiconductor, Inc.)
 
1222
Electrochemical Characterization of Surface States at the GaN/Electrolyte Interface (Cancelled)