Nitride Devices I

Monday, 30 May 2016: 13:40-16:00
Aqua 310 B (Hilton San Diego Bayfront)
Chair:
Marko J. Tadjer
13:40
1217
(Invited) Effects of Off-State Stress Voltage and Time on the Recovery of on-Resistance (Ron) of AlGaN/GaN MIS-Hemts
J. I. Chyi and C. C. Shiue (National Central University)
14:10
1218
(Invited) The Use of Sub-Bandgap Optical Pumping to Identify Defects in AlGaN/GaN High Electron Mobility Transistors
F. Ren (University of Florida)
14:30
1219
GaN MIS-HEMT with Low Dynamic ON-Resistance Using SiON Passivation
S. C. Liu, C. K. Huang, and E. Y. Chang (National Chiao Tung University)
 
1220
Comparison of SiNx and AlN Passivations for AlGaN/GaN Hemts (Cancelled)
15:20
1221
Characterization of GaN Device Interconnect Metallization Reliability
S. Kilgore, D. Hill, and B. Green (NXP Semiconductor, Inc.)
 
1222
Electrochemical Characterization of Surface States at the GaN/Electrolyte Interface (Cancelled)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 17
See more of: Electronic and Photonic Devices and Systems
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