(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective
P. Moens, A. Banerjee, A. Constant, P. Coppens, M. Caesar, Z. Li, S. Vandeweghe, F. Declercq, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, M. Tack (ON Semiconductor), M. Meneghini (University of Padova), S. Dalcanale (University of Padova, Italy), A. Tajilli (University of Padova), G. Meneghesso (University of Padova, Italy), E. Zanoni (University of Padova), M. Uren (University of Bristol, UK), I. Chatterjee (University of Bristol), S. Karboyan (University of Bristol, UK), and M. Kuball (University of Bristol)
