Electronic devices operate through charge carrier injection and transport, which are strongly dependent to the electronic structure of the semiconductor. For disordered organic semiconductors, Gaussian density-of-states (Gaussian DOS) and hopping transport are often proposed, described by analytical expressions for the charge carrier mobility as a function of the charge carrier density, electric field and temperature. However, due to the mathematical complexity of this approach, device level modelling is still lacking. In particular, for OFETs, correlation between charge carrier mobility and field-effect mobility is not sufficiently understood.

We proposed an analytical model, easy adaptable to spice model, for the linear regime transfer characteristics of OFETs with power-law dependent μ and R_C. The ratio method provides a set of parameters that give good match between transfer characteristics from experiment and model.

This work has been funded by Horizon 2020 Marie Skłodowska-Curie Research and Innovation Staff Exchange (RISE) Program (2015–2019) entitled DOMINO.