Monday, 29 May 2017: 14:40
Chequers (Hilton New Orleans Riverside)
In this talk I will discuss a disruptive device concept based on dynamic bandgap engineering in two dimensional layered seminconductors in order to achieve sub-60mV/decade subthrshold swing [1]. This device is refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET and it works on the principle of voltage induced stress transduction. It uses an electrostrictive material as gate insulator which expands when a gate bias is applied and thereby transduces an out-of-plane stress on the 2D semiconducting channel. The stress decreases the inter-layer distance between the consecutive layers of the 2D material and dynamically reduces its bandgap. Thus the device operates with a large bandgap in the OFF state and a small or zero bandgap in the ON state. As a consequence of this transduction mechanism, internal voltage amplification takes place which results in sub-60mV/decade subthreshold swing (SS).
1. Das, S. "Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current", Scientific Reports 2016, 6 (34811).