As a strategy to save the cost of expensive substrates in semiconductor processing, the technique called “layer-transfer” has been developed. In order to achieve real cost-reduction via the “layer-transfer”, the following needs to be insured: (1) Reusability of the expensive substrate, (2) Minimal substrate refurbishment step after the layer release, (3) Fast release rate, and (4) Precise control of a released interface. Although a number of layer transfer methods have been developed including chemical lift-off, optical lift-off, and mechanical lift-off, none of those three methods fully satisfies conditions listed above. In this talk, we will discuss our recent development in a “graphene-based layer-transfer” process that could fully satisfy the above requirements, where epitaxial graphene can serve as a universal seed layer to grow single-crystalline III-N, III-V, II-VI and IV semiconductor films and a release layer that allows precise and repeatable release at the graphene surface.