ZnO is a direct bandgap II-V compound semiconducting material with wide bandgap energy of 3.37 eV and large exciton binding energy of 60 meV. One of the advantages of ZnO is facile nanorod growth via hydrothermal method, which is low cost, non-toxic, low temperature, and scalable process. In hydrothermal growth, growth rate of c-plane is faster than m-plane in wurtzite crystal structure due to the higher surface energy of c-plane, hence ZnO nanowires or or bundle of nanorods along c-axis are generally formed. These ZnO nanorods with high surface to volume ratio can be employed in the gas sensor device as a sensing material to obtain high sensitivity for target gas.
In this study, AlGaN/GaN HEMT (high electron mobility transistor) based carbon dioxide sensor using ZnO nanorods as sensing material was fabricated, and the response of the device to carbon dioxide gas was investigated. The device showed current increase in carbon dioxide ambient due to the increase enhanced channel conductivity from 150oC, and fast reliable repeatability to cyclic exposures of various concentrations of carbon dioxide gas. Also, effect of humidity on sensing behavior was discussed.