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Investigation of DNA Detection Mechanism with AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensor in High Ionic Strength Solution

Monday, 29 May 2017: 11:20
Eglinton Winton (Hilton New Orleans Riverside)
Y. W. Chen, C. P. Hsu, I. Sarangadharan, and Y. L. Wang (National Tsing Hua University)
In this research, the electrical double layer HEMT device is used to serve as the DNA biosensor. In this experiment, we try to use the DNA sequence of miRNA-126, which serve as a novel biomarkers of cardiovascular disease (CVD), to test the ability of the novel DNA sensors.

Debye length has been a haunted problem among all the field effect transistor (FET) biosensor for years. As the Debye length is extremely low in high ionic strength solutions, the traditional FET may not be direct detect the biomolecular. The novel HEMT sensors using AlGaN/GaN can performs high sensitivity and great specificity in DNA sequences testing. The sensitivity can be down to the 1fM and the specificity measurement can separate the signals between two DNA sequences with two mismatch differences. Furthermore, the mechanism of the sensor structure has also been studied. Since the structure of the device has the separation between source drain channel and gate electrode, the comparison with different electrode area and gap distance has been done as well. With repeating electrical measurement confirming, the reusability can also be seen after the 95℃ dehybridization process.

With the Gibbs free energy of the specific sequences, we can also predict the equilibrium reaction constant and the binding ratio of probe DNA with the target DNA. The comparison between the thermal dynamics with the experiment consequence has been demonstrated too.