Electrical Studies on the ZnO/SiNWs P-N Junction Prepared from Si Nanowires Grown By Electroless Etching

Tuesday, 30 May 2017
Grand Ballroom (Hilton New Orleans Riverside)
V. H. Velez (University of Central Florida) and K. B. Sundaram (Univ. of Central Florida)
Zinc Oxide (ZnO) is a well-known prospective candidate for impurity doping specially when doped with group III elements due to improvements in properties of the films. The promising properties of zinc oxide such as good thermal stability, lower resistivity, nontoxicity, wide band gap (about 3.3 eV), and high conductivity make it an attractive candidate for many applications [1]. In particular, thin films of silicon doped ZnO have shown great interest in researchers to develop applications including transparent conductive oxide (TCO) properties with significant drop in resistivity values [2]. Furthermore, the low processing cost, natural abundance and the larger exciton binding energy of ZnO (60 meV) enable this material for luminescent and photovoltaic applications [3, 4].

In this study, we propose a new model of cost effective and high efficiency p-n junction based on Si nanowires (SiNWs) and ZnO with potential applications in solar energy. The ZnO grown on SiNWs may work as an active n-layer as well as antireflection coating improving reflectance obtained before, as shown in [5].