Resistive Switching Devices

Monday, 29 May 2017: 14:50-16:10
Norwich (Hilton New Orleans Riverside)
Chair:
Deji Akinwande
14:50
994
(Invited) Synaptic Plasticity in a Memristive Device below 500mV
S. R. Nandakumar and B. Rajendran (New Jersey Institute of Technology)
15:20
995
(Invited) Phase Change Materials-based Synaptic Devices for Energy Efficient Implementation of Learning in Hardware
Y. Shi and D. Kuzum (University of California, San Diego)
15:50
996
Effect of Resistive Switching-Layer Oxygen-Concentration on Nonvolatile Memory Characteristics for Carbon-Oxide Based Reram
S. M. Jin, K. H. Kwon, D. W. Kim, H. J. Kim, D. J. Kim, and J. G. Park (Hanyang University)
See more of: D01: Emerging Materials for Post CMOS Devices/Sensing and Applications 8
See more of: Dielectric Science and Materials
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