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Analysis of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Bi-Layer Gate Dielectric Stacks Using Maxwell-Wagner Instability Model

Wednesday, 4 October 2017: 17:20
Chesapeake D (Gaylord National Resort and Convention Center)

ABSTRACT WITHDRAWN

See more of: Modeling
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
See more of: Dielectric Science and Materials
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