Modeling

Wednesday, 4 October 2017: 13:30-18:00
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Geoffrey Pourtois and Michel Houssa
13:30
850
(Invited) The Inversion Behaviour of Narrow Band Gap Mos Systems: Experimental Observations, Physics Based Simulations and Applications
P. K. Hurley (Tyndall and Dept. of Chemistry University College Cork), S. Monaghan (University College Cork), E. O'Connor (IBM Zurich Research Laboratory), E. Caruso (Università degli Studi di Udine), K. Cherkaoui, L. Floyd (Tyndall National Institute, University College Cork), I. M. Povey (Tyndall National Institute - UCC), D. A. J. Millar, U. Peralagu, and I. G. Thayne (University of Glasgow)
14:00
851
(Invited) Metal-Atom Ionization and Diffusion under Electric Field around Metal/Insulator Interfaces; First-Principles View
T. Nakayama, Y. Asayama, and R. Nagasawa (Department of Physics, Chiba University)
14:30
852
(Invited) First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN
K. Shiraishi, K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai (Nagoya University), Y. Kangawa, and K. Kakimoto (Kyuushu University)
15:00
Break
15:10
853
(Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations
G. Pourtois (University of Antwerp, Belgium, imec, Belgium), A. Dabral (imec, Belgium, KULeuven, Belgium), K. Sankaran (imec, Belgium), W. Magnus (imec, Belgium, University of Antwerp, Belgium), H. Yu, A. de Jamblinne de Meux (imec, Belgium, KULeuven, Belgium), A. K. A. Lu (MathAM-OIL, Japan), S. Clima (imec, Belgium), K. Stokbro (Quantumwise, Denmark), M. Schaekers (imec, Belgium), M. Houssa (KULeuven, Belgium), N. Collaert, and N. Horiguchi (imec, Belgium)
16:10
855
(Invited) Ab Initio Study of Carrier Transport in Low-Dimensionality Materials
M. V. Fischetti (University of Texas at Dallas), W. G. Vandenberghe, G. Gaddemane, S. Chen (The University of Texas at Dallas), Z. Y. Ong (Institute of High Performace Computing, Singapore), E. Chen (TSMC, Taiwan), S. Narayanan (GlobalFoundries), A. Suarez Negreira (The University of Texas at Dallas), and S. Aboud (Synopsys)
16:40
856
Modeling and Simulation of Cu Drift in Porous Low-k Dielectrics
R. Ali (Virginia Polytechnic Institute and State University), S. W. King (Intel Corporation), and M. K. Orlowski (ECE Department Virginia Tech)
17:00
857
Hole-Doping Induced Ferromagnetism in Monolayer SnO: A First-Principles Study
M. Houssa, K. Iordanidou (University of Leuven), G. Pourtois (imec), V. V. Afanas'ev, and A. Stesmans (University of Leuven)
 
858
Analysis of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Bi-Layer Gate Dielectric Stacks Using Maxwell-Wagner Instability Model (Cancelled)
17:40
859
Oxygen Polyvacancies as Conductive Filament in Zirconia: First Principle Simulation
T. V. Perevalov (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University) and D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS)