The p-block elements and their compounds and alloys are important materials for many electronic applications. Over the last 4 years we have developed an electrolyte system based on compatible tetrabutylammonium chlorometallate metal sources in non-aqueous electrolytes (3, 4) that allows the one-pot preparation of a wide range of functional materials, such as GeSbTe(5), CdHgTe, and BiTe, based on the p-block.
In this lecture I will discuss the electrodeposition of p-block elements from weakly coordinating solvents and present results for the electrodeposition and electrical characterization of GeSbTe solid state memory materials and CdHgTe infrared detector materials and contrast their properties to the properties of conventionally prepared materials.
This work is conducted as part of the ADEPT project funded by EPSRC (EP/N035437/1).
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